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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR (NPN) TO--126 FEATURES Power dissipation PCM: 1 W (Tamb=25) 1. EMITTER 2. COLLECTOR 3. BASE Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) VCE=2V, IC=1A IC=2A, IB=200mA IC=2A, IB=200mA 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100A, IE=0 Ic=5mA, IB=0 IE=100A, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA 50 50 5 1 1 100 100 400 0.5 2 80 45 A A V V MHz pF fT Cob VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz Typical Characteristics 2SD886 |
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